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2SC2351

2SC2351 制造商编号: 2SC2351 制造商: ISC [Inchange Semiconductor Company Limited] 描述: isc Silicon NPN RF Transistor Datasheet 下载 DATA SHEET SILICON
2014年12月8日-SILICONTRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET Document P
2013年4月3日-暂无图片 2SC2351 型号: 大小: 109.28KB 共3页 厂商: ISC[InchangeSemiconductorCompanyLimited] 主页: 功能介绍: 2SC2351 - isc Silicon NPN RF
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Details, datasheet, quote on part number: 2SC2351 Part 2SC2351 Category Discrete => Transistors => Bipolar => Audio Amplifier Application => NPN Description High Frequency

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DATA SHEET Document No. P10350EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan © 1984 FEATURES • NF 1.5 dB TYP. @ f = 1.0 GHz • MAG 14 dB TYP. @ f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 70 mA Total Power Dissipation PT 250 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 μA VCB = 15 V, IE = 0 Emitter Cutoff Current IEBO 0.1 μA VEB = 2.0 V, IC = 0 DC Current Gain hFE 40 200 VCE = 10 V, IC = 20 mA Gain Bandwidth Product fT 4.5 GHz VCE = 10 V, IC = 20 mA Output Capacitance Cob 0.75 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz Insertion Power Gain S21e2 9 11 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz Noise Figure NF 1.5 3.0 dB VCE = 10 V, IC = 5 mA, f = 1.0 GHz Maximum Available Gain MAG 14 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz hFE Classification Class E/P * F/Q * Marking R2 R3 hFE 40 to 120 100 to 200 * Old Specification / New Specification PACKAGE DIMENSIONS (Units: mm) 1.5 2 1 3 Marking PIN CONNECTIONS 1. 2. 3. Emitter Base Collector 2.8±0.2 2.9±0.2 1.1 to 1.4 0 to 0.1 0.95 0.3 0.95 0.4 +0.1 −0.05 0.4 +0.1 −0.05 0.16 +0.1 −0.06 0.65 +0.1 −0.15 2 2SC2351 TYPICAL CHARACTERISTICS (TA = 25 °C) DC CURRENT GAIN vs. COLLECTOR CURRENT IC-Collector Current-mA hFE-DC Current Gain 0.5 1 2 5 10 20 50 70 10 20 30 50 100 200 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT IC-Collector Current-mA fT-Gain Bandwidth Product-GHz 0.5 1 2 5 10 20 50 70 0.1 0.2 0.5 1 2 5 7 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE VCB-Collector to Base Voltage-V Cob-Output Capacitance pF 0 0.5 1 2 5 10 20 30 0.3 0.5 1 2 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VBE-Base to Emitter Voltage-V IC-Collector Current-mA 0.5 0.6 0.7 0.8 0.9 0.5 1 2 5 10 20 50 70 INSERTION GAIN vs. COLLECTOR CURRENT IC-Collector Current-mA |S21e| 2-Insertion Gain-dB 0.5 1 2 5 10 20 50 70 0 5 10 15 VCE = 10 V VCE = 10 V f = 1.0 MHz NOISE FIGURE. COLLECTOR CURRENT IC-Collector Current-mA NF-Noise Figure-dB 0.5 1 2 5 10 20 50 70 0 1 2 3 4 5 7 6 VCE = 10 V VCE = 10 V f = 1.0 GHz VCE = 10 V f = 1.0 GHz 3 2SC2351 NF, Ga vs. COLLECTOR CURRENT IC-Collector Current-mA NF-Noise Figure-dB Ga-Associated Gain-dB 1 3 5 7 10 30 0 0 5 10 VCE = 10 V f = 1 GHz 1 2 3 4 5 6 Ga NF 2SC2351 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5

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